[ Instrument Network Instrument R & D ] Recently, the research group of Zhu Xuebin, a researcher of functional materials in the Institute of Solid State Research, Chinese Academy of Sciences has made progress in the construction of backward diode devices. This work provides new ideas for exploring the construction of non-degenerate semiconductor-based reverse diode devices. Non-degenerate transparent conductive semiconductors AgCrO2 and In2O3 were used to construct reverse diode rectifiers for p-type and n-type terminals, respectively.
It is reported that among the electronic components, a device with two electrodes only allows current to flow in a single direction. Many uses are made of its rectifying function. Varactors are used as electronic adjustable capacitors. The current directivity of most diodes is commonly referred to as the "rectification" function. The general function of a diode is to allow current to flow in only one direction (known as forward bias) and to block in the reverse direction (called reverse bias). Therefore, the diode can be thought of as an electronic version of a check valve.
In addition, the reverse diode has a wide range of applications in small signal rectification, microwave detection, and mixing. A reverse diode is a type of tunnel diode with a small peak current. In the forward low voltage region, the tunnel current is very small, but in the reverse voltage region, the current will increase rapidly with increasing voltage. At present, the reverse diode is basically composed of a degenerate semiconductor or a near-degenerate material system, which requires heavy doping or thickness modulation, etc., resulting in complicated device construction.
Constructing a fully transparent reverse diode based on non-degenerate transparent conductive p-type semiconductors and n-type semiconductors will simplify the construction of the device and broaden the application of reverse diodes in micro devices. Combined with the research foundation of the research group's existing transparent conductive p-type AgCrO2 thin film and n-type In2O3 thin film, the team realized the construction of AgCrO2 / In2O3 reverse rectifier diode.
Finally, the research results show that the reverse-diode device composed of non-degenerate transparent semiconductor films AgCrO2 and In2O3 can achieve a reverse / forward current rectification ratio of the order of 103 and has a small tunneling current turn-on voltage. The reverse rectification mechanism of the device is derived from the band-to-band tunneling current caused by the type III band arrangement in the heterojunction.
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